2sc5755 2004-07-01 1 toshiba transistor silicon npn epitaxial type 2sc5755 high-speed switching applications dc-dc converter applications strobe applications ? high dc current gain: h fe = 400 to 1000 (i c = 0.2 a) ? low collector-emitter saturation voltage: v ce (sat) = 0.12 v (max) ? high-speed switching: t f = 25 ns (typ.) maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 10 v emitter-base voltage v ebo 7 v dc i c 2 collector current pulse i cp 3.5 a base current i b 200 ma dc 500 collector power dissipation t = 10 s p c (note) 750 mw junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note: mounted on an fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ) electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 20 v, i e = 0 ? ? 100 na emitter cut-off current i ebo v eb = 7 v, i c = 0 ? ? 100 na collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 10 ? ? v h fe (1) v ce = 2 v, i c = 0.2 a 400 ? 1000 dc current gain h fe (2) v ce = 2 v, i c = 0.6 a 200 ? ? collector-emitter saturation voltage v ce (sat) i c = 0.6 a, i b = 12 ma ? ? 0.12 v base-emitter saturation voltage v be (sat) i c = 0.6 a, i b = 12 ma ? ? 1.10 v rise time t r ? 60 ? storage time t stg ? 215 ? switching time fall time t f see figure 1. v cc 6 v, r l = 10 ? i b1 = ? i b2 = 12 ma ? 25 ? ns unit: mm jedec D jeita D toshiba 2-3s1c weight: 0.01 g (typ.)
2sc5755 2004-07-01 2 marking w l part no. (or abbreviation code) lot code (month) lot code (year) dot: even year no dot: odd year figure 1 switching time test circuit & timing chart i b2 i b1 20 s output input i b2 i b1 r l v cc duty cycle < 1%
2sc5755 2004-07-01 3 collector current i c (a) base-emitter saturation voltage v be (sat) (v) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) v be (sat) ? i c base-emitter voltage v be (v) i c ? v be h fe ? i c 20 30 40 60 10 8 6 4 i b = 2ma 0 0 1.2 0.8 0.4 0.4 0.8 1.2 1.6 2 2.4 0.2 0.6 1.0 0 common emitter ta = 25 c single nonrepetitive pulse ta = 100c 25 ? 55 0.001 0.001 0.01 0.1 1 0.01 0.1 1 0.003 0.03 0.3 3 0.003 0.03 0.3 common emitter i c /i b = 50 single nonrepetitive pulse ta = 100c 25 ? 55 0.01 0.001 0.1 1 10 0.01 0.1 1 0.003 0.03 0.3 3 0.03 0.3 3 common emitter i c /i b = 50 single nonrepetitive pulse 0 0.4 0.8 1.2 1.6 2 ta = 100c ? 55 25 1.6 1.2 0.8 0.4 0 common emitter v ce = 2 v single nonrepetitive pulse ta = 100c 25 ? 55 10 0.001 100 1000 10000 0.01 0.1 1 0.003 0.03 0.3 3 30 300 3000 common emitter v ce = 2 v single nonrepetitive pulse
2sc5755 2004-07-01 4 r th ? t w collector-emitter voltage v ce (v) safe operating area collector current i c (a) pulse width t w (s) transient thermal resistance r th (j-a) (c/w) 0.001 1 3 10 30 100 1000 0.003 0.01 0.03 0.1 0.3 300 1 3 10 300 1000 30 100 curves should be applied in thermal limited area. single nonrepetitive pulse ta = 25c mounted on an fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 2 * : single nonrepetitive pulse ta = 25c note that the curves for 100 ms, 10 s and dc operation will be different when the devices aren?t mounted on an fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ). these characteristic curves must be derated linearly with increase in temperature. v ceo max 10 s * 10 ms * 1 ms * 100 s * 100 ms * 0.03 0.01 0.1 1 10 30 100 0.03 0.1 0.3 1 10 3 dc operation (ta = 25c) i c max (continuous) i c max (pulsed) * 3 0.3
2sc5755 2004-07-01 5 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to im prove the quality and reliab ility of its products. neve rtheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunctio n or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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